Leading Thermal Innovation for Next-Generation Semiconductors

As silicon carbide (SiC) and gallium nitride (GaN) wide bandgap semiconductors replace silicon across electronics, their high heat fluxes pose thermal management challenges. With 10X the conductivity producing 5-10X higher junction temperatures, these advanced devices risk heat degradation and failure without tailored thermal solutions.

SigmaOx anticipated the rise of revolutionary SiC and GaN technologies. We intentionally design our thermal interface materials (TIMs) ahead of the curve—ready to handle the severe thermal demands emerging devices introduce even before market availability. Our future-facing philosophy ensures SigmaOx remains at the apex of innovations in semiconductor cooling.

While applications for SiC and GaN continue rapidly evolving, our TIMs already deliver the thermomechanical stability and heat transfer these chips require. We overcome interface voids causing hot spots. We match coefficient of thermal expansion, preventing pump out. Whether used in electric vehicles, renewable energy, or next generation computational hardware, SigmaOx empowers customers to harness the full efficiency and performance gains of wide bandgap semiconductors today and tomorrow. Let us help you push progress with custom thermal solutions purpose-built for the latest in power electronics.